Abstract:
AlGaN/GaN high-electron mobility transistors (HEMTs) were fabricated on SiC substrates with epitaxial layers grown by multiple suppliers and methods. Devices with gate le...Show MoreMetadata
Abstract:
AlGaN/GaN high-electron mobility transistors (HEMTs) were fabricated on SiC substrates with epitaxial layers grown by multiple suppliers and methods. Devices with gate lengths varying from 0.50 to 0.09 mum were fabricated on each sample. We demonstrate the impact of varying the gate lengths and show that the unity current gain frequency response (fT) is limited by short-channel effects for all samples measured. We present an empirically based physical model that can predict the expected extrinsic fT for many combinations of gate length and commonly used barrier layer thickness (tbar) on silicon nitride passivated T-gated AlGaN/GaN HEMTs. The result is that even typical high-aspect-ratio (gate length to barrier thickness) devices show device performance limitations due to short-channel effects. We present the design tradeoffs and show the parameter space required to achieve optimal frequency performance for GaN technology. These design rules differ from the traditional GaAs technology by requiring a significantly higher aspect ratio to mitigate the short-channel effects.
Published in: IEEE Transactions on Electron Devices ( Volume: 54, Issue: 10, October 2007)
Air Force Research Laboratory, Dayton, OH, USA
Gregg H. Jessen (M'01) was born in Dayton, OH, in 1975. He received the B.S. degree in engineering physics from Wright State University, Dayton, in 1997, and the M.S. and Ph.D. degrees in electrical engineering from Ohio State University, Columbus, OH, in 1998 and 2002, respectively.
He is currently a Senior Electronics Engineer with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, D...Show More
Gregg H. Jessen (M'01) was born in Dayton, OH, in 1975. He received the B.S. degree in engineering physics from Wright State University, Dayton, in 1997, and the M.S. and Ph.D. degrees in electrical engineering from Ohio State University, Columbus, OH, in 1998 and 2002, respectively.
He is currently a Senior Electronics Engineer with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, D...View more
Air Force Research Laboratory, Dayton, OH, USA
Robert C. Fitch, Jr. (M'85) was born in Baltimore, MD, in 1961. He received the B.S. degree in mechanical engineering from the Pennsylvania State University, University Park, PA, in 1983, the B.S. degree in electrical engineering from Louisiana Tech University, Ruston, in 1985, and the M.S. degree in electrical engineering from the Air Force Institute of Technology, Ohio, in 1990.
He served as a U.S. Air Force Officer for ...Show More
Robert C. Fitch, Jr. (M'85) was born in Baltimore, MD, in 1961. He received the B.S. degree in mechanical engineering from the Pennsylvania State University, University Park, PA, in 1983, the B.S. degree in electrical engineering from Louisiana Tech University, Ruston, in 1985, and the M.S. degree in electrical engineering from the Air Force Institute of Technology, Ohio, in 1990.
He served as a U.S. Air Force Officer for ...View more
Air Force Research Laboratory, Dayton, OH, USA
James K. Gillespie (M'97) was born in Manistee, MI, in 1958. He received the B.S. degree in electrical engineering from Michigan Technological University, Houghton, in 1986.
He was commissioned in the U.S. Air Force and assigned to the Air Force Research Laboratory, where he focused on design, process, and test of GaAs HEMTs and HBTs devices. He was also assigned to the Defense Advance Research Programs Agency's Tri-Servic...Show More
James K. Gillespie (M'97) was born in Manistee, MI, in 1958. He received the B.S. degree in electrical engineering from Michigan Technological University, Houghton, in 1986.
He was commissioned in the U.S. Air Force and assigned to the Air Force Research Laboratory, where he focused on design, process, and test of GaAs HEMTs and HBTs devices. He was also assigned to the Defense Advance Research Programs Agency's Tri-Servic...View more
Air Force Research Laboratory, Dayton, OH, USA
Glen (David) Via was born in Greeneville, OH, in 1964. He received the B.S. degree in human factors engineering from Wright State University, Dayton, OH, in 1992.
After completing a military assignment as a Research Associate with the U.S. Air Force in 1987, he has remained with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Devices Research Engineer. His w...Show More
Glen (David) Via was born in Greeneville, OH, in 1964. He received the B.S. degree in human factors engineering from Wright State University, Dayton, OH, in 1992.
After completing a military assignment as a Research Associate with the U.S. Air Force in 1987, he has remained with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Devices Research Engineer. His w...View more
Air Force Research Laboratory, Dayton, OH, USA
Antonio Crespo was born in Mayagüez, Puerto Rico, in 1964. He received the B.S. and M.S. degrees in electrical engineering from the University of Puerto Rico, Mayagüez Campus, Mayagüez, in 1988 and 1994, respectively. He received the Ph.D. degree in electrical engineering from the University of Dayton, Dayton, OH, in 2002.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air For...Show More
Antonio Crespo was born in Mayagüez, Puerto Rico, in 1964. He received the B.S. and M.S. degrees in electrical engineering from the University of Puerto Rico, Mayagüez Campus, Mayagüez, in 1988 and 1994, respectively. He received the Ph.D. degree in electrical engineering from the University of Dayton, Dayton, OH, in 2002.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air For...View more
Air Force Research Laboratory, Dayton, OH, USA
Derrick Langley (M'03) was born in Brooklyn, NY, in 1970. He received the B.S. degree in electrical engineering from the University of Central Florida, Orlando, in 2003. He is currently working toward the M.S. degree in electrical engineering at Wright State University, Dayton, OH.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Devices ...Show More
Derrick Langley (M'03) was born in Brooklyn, NY, in 1970. He received the B.S. degree in electrical engineering from the University of Central Florida, Orlando, in 2003. He is currently working toward the M.S. degree in electrical engineering at Wright State University, Dayton, OH.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Devices ...View more
Air Force Research Laboratory, Dayton, OH, USA
Daniel J. Denninghoff (S'04) was born in Battle Creek, MI, in 1979. He received the B.S. degree in electrical engineering from the United States Air Force Academy, Colorado Springs, CO, in 2004, and the M.S. degree in electrical engineering from the Air Force Institute of Technology, Ohio, in 2006.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH, as a...Show More
Daniel J. Denninghoff (S'04) was born in Battle Creek, MI, in 1979. He received the B.S. degree in electrical engineering from the United States Air Force Academy, Colorado Springs, CO, in 2004, and the M.S. degree in electrical engineering from the Air Force Institute of Technology, Ohio, in 2006.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH, as a...View more
Air Force Research Laboratory, Dayton, OH, USA
Manuel Trejo, Jr. (S'05) was born in Monterrey, Mexico, in 1973. He received the B.S. degree in electrical engineering from the University of Texas at San Antonio, San Antonio. He is currently working toward the M.S. degree in electrical engineering at Wright State University, Dayton, OH.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic D...Show More
Manuel Trejo, Jr. (S'05) was born in Monterrey, Mexico, in 1973. He received the B.S. degree in electrical engineering from the University of Texas at San Antonio, San Antonio. He is currently working toward the M.S. degree in electrical engineering at Wright State University, Dayton, OH.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic D...View more
Semiconductor Research Center, Wright State University, Dayton, OH, USA
Eric R. Heller was born in Dayton, OH, in 1975. He received the Ph.D. degree in physics from Ohio State University, Columbus, OH, in 2003, and the B.S. degree in physics at Wright State University, Dayton, in 1996.
He was with the Intel Corporation as a Senior Process Engineer. He is currently with the Semiconductor Research Center, Wright State University, Dayton, as an Associate Research Physicist. His current research i...Show More
Eric R. Heller was born in Dayton, OH, in 1975. He received the Ph.D. degree in physics from Ohio State University, Columbus, OH, in 2003, and the B.S. degree in physics at Wright State University, Dayton, in 1996.
He was with the Intel Corporation as a Senior Process Engineer. He is currently with the Semiconductor Research Center, Wright State University, Dayton, as an Associate Research Physicist. His current research i...View more
Contents Air Force Research Laboratory, Dayton, OH, USA
Gregg H. Jessen (M'01) was born in Dayton, OH, in 1975. He received the B.S. degree in engineering physics from Wright State University, Dayton, in 1997, and the M.S. and Ph.D. degrees in electrical engineering from Ohio State University, Columbus, OH, in 1998 and 2002, respectively.
He is currently a Senior Electronics Engineer with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton. His current research interests are the design and fabrication of wide bandgap, high-power, and high-frequency devices. His current research also includes electron-beam lithography for RF-device applications.
Gregg H. Jessen (M'01) was born in Dayton, OH, in 1975. He received the B.S. degree in engineering physics from Wright State University, Dayton, in 1997, and the M.S. and Ph.D. degrees in electrical engineering from Ohio State University, Columbus, OH, in 1998 and 2002, respectively.
He is currently a Senior Electronics Engineer with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton. His current research interests are the design and fabrication of wide bandgap, high-power, and high-frequency devices. His current research also includes electron-beam lithography for RF-device applications.View more
Air Force Research Laboratory, Dayton, OH, USA
Robert C. Fitch, Jr. (M'85) was born in Baltimore, MD, in 1961. He received the B.S. degree in mechanical engineering from the Pennsylvania State University, University Park, PA, in 1983, the B.S. degree in electrical engineering from Louisiana Tech University, Ruston, in 1985, and the M.S. degree in electrical engineering from the Air Force Institute of Technology, Ohio, in 1990.
He served as a U.S. Air Force Officer for 11 years, focusing on III–V semiconductor research. After leaving the Air Force, he served as a Yield Enhancement Engineer with the Motorola Semiconductor Products Sector, Tempe, AZ, and with the Harris Semiconductor, Mountain Top, PA. He returned to the government in 1998, where he has been working as a Civil Servant with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH, and has focused on heterojunction bipolar and high electron mobility GaAs and GaN device design, fabrication, and testing. He has authored or coauthored 48 publications, including a book entitled Leading the Way to Competitive Excellence: the Harris Mountaintop Case Study (Milwaukee, WI, ASQ Quality Press, 1998).
Robert C. Fitch, Jr. (M'85) was born in Baltimore, MD, in 1961. He received the B.S. degree in mechanical engineering from the Pennsylvania State University, University Park, PA, in 1983, the B.S. degree in electrical engineering from Louisiana Tech University, Ruston, in 1985, and the M.S. degree in electrical engineering from the Air Force Institute of Technology, Ohio, in 1990.
He served as a U.S. Air Force Officer for 11 years, focusing on III–V semiconductor research. After leaving the Air Force, he served as a Yield Enhancement Engineer with the Motorola Semiconductor Products Sector, Tempe, AZ, and with the Harris Semiconductor, Mountain Top, PA. He returned to the government in 1998, where he has been working as a Civil Servant with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH, and has focused on heterojunction bipolar and high electron mobility GaAs and GaN device design, fabrication, and testing. He has authored or coauthored 48 publications, including a book entitled Leading the Way to Competitive Excellence: the Harris Mountaintop Case Study (Milwaukee, WI, ASQ Quality Press, 1998).View more
Air Force Research Laboratory, Dayton, OH, USA
James K. Gillespie (M'97) was born in Manistee, MI, in 1958. He received the B.S. degree in electrical engineering from Michigan Technological University, Houghton, in 1986.
He was commissioned in the U.S. Air Force and assigned to the Air Force Research Laboratory, where he focused on design, process, and test of GaAs HEMTs and HBTs devices. He was also assigned to the Defense Advance Research Programs Agency's Tri-Service Team for the MIMIC Program, which resulted in the advancement of GaAs technology for military and commercial applications. In 1990, he separated from the Air Force and became a Full Time Civilian Employee with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH. He is currently focusing on III-nitride device development and other advanced transistor technologies.
James K. Gillespie (M'97) was born in Manistee, MI, in 1958. He received the B.S. degree in electrical engineering from Michigan Technological University, Houghton, in 1986.
He was commissioned in the U.S. Air Force and assigned to the Air Force Research Laboratory, where he focused on design, process, and test of GaAs HEMTs and HBTs devices. He was also assigned to the Defense Advance Research Programs Agency's Tri-Service Team for the MIMIC Program, which resulted in the advancement of GaAs technology for military and commercial applications. In 1990, he separated from the Air Force and became a Full Time Civilian Employee with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH. He is currently focusing on III-nitride device development and other advanced transistor technologies.View more
Air Force Research Laboratory, Dayton, OH, USA
Glen (David) Via was born in Greeneville, OH, in 1964. He received the B.S. degree in human factors engineering from Wright State University, Dayton, OH, in 1992.
After completing a military assignment as a Research Associate with the U.S. Air Force in 1987, he has remained with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Devices Research Engineer. His work has focused on the development and characterization of GaAs- and GaN-based device technologies. He currently serves as the Tri-Service Lead in support of the Defense Advance Research Programs Agency Wide Bandgap for Semiconductors program.
Mr. Via serves on the Executive Board for the International Conference on Compound Semiconductor Manufacturing Technology.
Glen (David) Via was born in Greeneville, OH, in 1964. He received the B.S. degree in human factors engineering from Wright State University, Dayton, OH, in 1992.
After completing a military assignment as a Research Associate with the U.S. Air Force in 1987, he has remained with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Devices Research Engineer. His work has focused on the development and characterization of GaAs- and GaN-based device technologies. He currently serves as the Tri-Service Lead in support of the Defense Advance Research Programs Agency Wide Bandgap for Semiconductors program.
Mr. Via serves on the Executive Board for the International Conference on Compound Semiconductor Manufacturing Technology.View more
Air Force Research Laboratory, Dayton, OH, USA
Antonio Crespo was born in Mayagüez, Puerto Rico, in 1964. He received the B.S. and M.S. degrees in electrical engineering from the University of Puerto Rico, Mayagüez Campus, Mayagüez, in 1988 and 1994, respectively. He received the Ph.D. degree in electrical engineering from the University of Dayton, Dayton, OH, in 2002.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Device Research Engineer.
Antonio Crespo was born in Mayagüez, Puerto Rico, in 1964. He received the B.S. and M.S. degrees in electrical engineering from the University of Puerto Rico, Mayagüez Campus, Mayagüez, in 1988 and 1994, respectively. He received the Ph.D. degree in electrical engineering from the University of Dayton, Dayton, OH, in 2002.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Device Research Engineer.View more
Air Force Research Laboratory, Dayton, OH, USA
Derrick Langley (M'03) was born in Brooklyn, NY, in 1970. He received the B.S. degree in electrical engineering from the University of Central Florida, Orlando, in 2003. He is currently working toward the M.S. degree in electrical engineering at Wright State University, Dayton, OH.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Devices Research Engineer. His current research interests include the design, fabrication, modeling, and characterization of GaN-based high-electron mobility transistors in particular and nitride-based electronics and optoelectronics in general.
Derrick Langley (M'03) was born in Brooklyn, NY, in 1970. He received the B.S. degree in electrical engineering from the University of Central Florida, Orlando, in 2003. He is currently working toward the M.S. degree in electrical engineering at Wright State University, Dayton, OH.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Devices Research Engineer. His current research interests include the design, fabrication, modeling, and characterization of GaN-based high-electron mobility transistors in particular and nitride-based electronics and optoelectronics in general.View more
Air Force Research Laboratory, Dayton, OH, USA
Daniel J. Denninghoff (S'04) was born in Battle Creek, MI, in 1979. He received the B.S. degree in electrical engineering from the United States Air Force Academy, Colorado Springs, CO, in 2004, and the M.S. degree in electrical engineering from the Air Force Institute of Technology, Ohio, in 2006.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH, as an Electronic Devices Research Engineer. His current research interests include the design, fabrication, and characterization of GaN-based high-electron mobility transistors in particular and nitride-based electronics and optoelectronics in general.
Daniel J. Denninghoff (S'04) was born in Battle Creek, MI, in 1979. He received the B.S. degree in electrical engineering from the United States Air Force Academy, Colorado Springs, CO, in 2004, and the M.S. degree in electrical engineering from the Air Force Institute of Technology, Ohio, in 2006.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH, as an Electronic Devices Research Engineer. His current research interests include the design, fabrication, and characterization of GaN-based high-electron mobility transistors in particular and nitride-based electronics and optoelectronics in general.View more
Air Force Research Laboratory, Dayton, OH, USA
Manuel Trejo, Jr. (S'05) was born in Monterrey, Mexico, in 1973. He received the B.S. degree in electrical engineering from the University of Texas at San Antonio, San Antonio. He is currently working toward the M.S. degree in electrical engineering at Wright State University, Dayton, OH.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Devices Research Engineer. His current research interests include the design, fabrication, and characterization of GaN-based high-electron mobility transistors, MEMS, and NEMS devices.
Manuel Trejo, Jr. (S'05) was born in Monterrey, Mexico, in 1973. He received the B.S. degree in electrical engineering from the University of Texas at San Antonio, San Antonio. He is currently working toward the M.S. degree in electrical engineering at Wright State University, Dayton, OH.
He is currently with the Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, as an Electronic Devices Research Engineer. His current research interests include the design, fabrication, and characterization of GaN-based high-electron mobility transistors, MEMS, and NEMS devices.View more
Semiconductor Research Center, Wright State University, Dayton, OH, USA
Eric R. Heller was born in Dayton, OH, in 1975. He received the Ph.D. degree in physics from Ohio State University, Columbus, OH, in 2003, and the B.S. degree in physics at Wright State University, Dayton, in 1996.
He was with the Intel Corporation as a Senior Process Engineer. He is currently with the Semiconductor Research Center, Wright State University, Dayton, as an Associate Research Physicist. His current research interests include physics-based modeling of electrical, thermal, and stress effects in wide bandgap semiconductor devices, with a current focus on the initial performance and long-term degradation of GaN high-electron mobility transistors.
Eric R. Heller was born in Dayton, OH, in 1975. He received the Ph.D. degree in physics from Ohio State University, Columbus, OH, in 2003, and the B.S. degree in physics at Wright State University, Dayton, in 1996.
He was with the Intel Corporation as a Senior Process Engineer. He is currently with the Semiconductor Research Center, Wright State University, Dayton, as an Associate Research Physicist. His current research interests include physics-based modeling of electrical, thermal, and stress effects in wide bandgap semiconductor devices, with a current focus on the initial performance and long-term degradation of GaN high-electron mobility transistors.View more
