Polarization Effects of Ecitation Light Source on Photoluminescence Spectra of INGAASP/INP Quantum Well Structures

We have observed the photoluminescence (PL) spectra of InGaAsP/InP quantum well structures. PL spectra peak movements for TE or TM mode excitation are observed by changing the incident angle of the excitation light. The PL spectra peak for TM mode excitation moves toward the longer wavelength as compared with that estimated by the heat dissipation.

I. Introduction

The photoluminescence (PL) measurement of semiconductor materials is widely used for the evaluation of their characteristics. The polarization effects of the excitation light source have not been analyzed as yet within our knowledge. The quantum well structure is asymmetric; therefore the dependence of PL spectra on the polarization of the excitation light source is expected. Here we have measured the dependence using InGaAs/InP quantum well (QW) structures.