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On-Wafer Measurement of Transistor Noise Parameters at NIST | IEEE Journals & Magazine | IEEE Xplore

On-Wafer Measurement of Transistor Noise Parameters at NIST


Abstract:

The National Institute of Standards and Technology has developed the capability to measure noise parameters on a wafer in the 1-12.4-GHz range. The authors describe the m...Show More

Abstract:

The National Institute of Standards and Technology has developed the capability to measure noise parameters on a wafer in the 1-12.4-GHz range. The authors describe the measurement method and the uncertainty analysis and present results of measurements on a highly reflective transistor. Typical standard uncertainties are within the range of 20-25 K in Tmin, which is the minimum transistor noise temperature, and about 0.03 in the magnitude of Gammaopt, which is the reflection coefficient for which Tmin occurs
Published in: IEEE Transactions on Instrumentation and Measurement ( Volume: 56, Issue: 2, April 2007)
Page(s): 551 - 554
Date of Publication: 12 March 2007

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