Successful Development and Implementation of Statistical Outlier Techniques on 90nm and 65nm Process Driver Devices | IEEE Conference Publication | IEEE Xplore

Successful Development and Implementation of Statistical Outlier Techniques on 90nm and 65nm Process Driver Devices


Abstract:

Burn-in and the concomitant post-burn-in retest are significant cost adders to the overall IC manufacturing and test process. Methods to reduce burn-in capacity are conti...Show More

Abstract:

Burn-in and the concomitant post-burn-in retest are significant cost adders to the overall IC manufacturing and test process. Methods to reduce burn-in capacity are continually sought. Traditional outlier screens such as fixed-limit analyses with parametric or non-parametric statistics, when applied to the newest technologies, result in excessive Type I or II errors which cannot be tolerated. In this paper, we describe the results from applying statistical burn-in avoidance techniques using time-zero sort test responses to driver designs fabricated in 90nm and 65nm low leakage technologies and libraries
Date of Conference: 26-30 March 2006
Date Added to IEEE Xplore: 04 December 2006
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Conference Location: San Jose, CA, USA

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