An analytic polysilicon depletion effect model for MOSFETs

A novel polysilicon depletion model for MOSFET devices is presented. It is shown that only simple modifications to standard analytical MOSFET models used for circuit simulations are required to account for the polysilicon depletion effect. The accuracy of the model is validated by comparing results to both simulated and measured device characteristics. It is also shown that neglecting the polysilicon depletion effect for devices with nondegenerate polysilicon gates may lead to nonphysical model parameter values and large errors in the calculated intrinsic device capacitances.<>