Abstract:
The inclusion of impact ionization in device simulation often suffers from numerical instability. In the present work, a general technique is demonstrated for applying ci...Show MoreMetadata
Abstract:
The inclusion of impact ionization in device simulation often suffers from numerical instability. In the present work, a general technique is demonstrated for applying circuit boundary conditions to achieve numerical stability. This technique has been used in the simulation of BV/sub CEO/ of an advanced silicon bipolar device. An I-V curve was obtained showing a new, previously unreported feature, namely, two distinct regions where snap-back occurs. Measurements on fabricated devices confirmed this phenomenon. A detailed physical explanation for the shape of the I-V curves is provided. The dependence on the width and doping of the epi-layer part of the collector is also analyzed.<>
Date of Conference: 08-11 December 1991
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-0243-5
Print ISSN: 0163-1918