Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length

The millimeter-wave performance is reported for Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As high-electron-mobility transistors (HEMTs) with 0.2- mu m and 0.1- mu m-long gates on material grown by molecular-beam epitaxy on semi-insulating InP substrates. Devices of 50- mu m width exhibited extrinsic transconductances of 800 and 1080 mS/mm, respectively. External f/sub T/ (maximum frequency of oscillation) of 120 and 135 GHz, respectively, were measured. A maximum f/sub T/ of 170 GHz was obtained from a 0.1*200- mu m/sup 2/ device. A minimum noise figure of 0.8 dB and associated gain of 8.7 dB were obtained from a single-stage amplifier at frequencies near 63 GHz.<>