Abstract:
Monolithic gain blocks for millimeter-wave amplifiers have been developed using 0.1- mu m gate planar-doped pseudomorphic high electron mobility transistors (HEMTs) and s...Show MoreMetadata
Abstract:
Monolithic gain blocks for millimeter-wave amplifiers have been developed using 0.1- mu m gate planar-doped pseudomorphic high electron mobility transistors (HEMTs) and successfully applied to U- and W-band single-stage amplifiers. The gain block consists of the HEMT and input/output matching circuits integrated in a single chip. The U-band amplifier exhibited a gain of 5.0+or-0.7 dB and a noise figure of less than 2.8 dB over 45-55 GHz. The W-band amplifier showed a gain of 3.1+or-0.3 dB and a noise figure of 4.5+or-0.5 dB over 94-98 GHz.<>
Published in: 1992 IEEE MTT-S Microwave Symposium Digest
Date of Conference: 01-05 June 1992
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-0611-2
Print ISSN: 0149-645X
