The modeling and measurement of lateral bipolar junction transistors

A physically based, large-signal model for the lateral p-n-p transistor is developed and compared with DC and transient measurements. The analytical equations for the lateral and vertical parts of the lateral p-n-p are derived. The analytical geometrical factor for the lateral p-n-p transistor is developed to derive a charge-based large-signal model. The partitioned-charge method is used to account for the non-quasi-static effects since the lateral p-n-p transistor has a wide base width. The simulation shows good agreement with the measurement, indicating that the PC method is sufficient for modeling the lateral p-n-p transistor without resorting to complex equations for NQS (non-quasi-static) effects. This simple model can reduce the simulation time quite a lot and help the circuit designer in estimating the effect of the parasitic lateral p-n-p for complex integrated circuit design.<>