14xx-nm high brightness tapered diode lasers grown by solid-source MBE | IEEE Journals & Magazine | IEEE Xplore

14xx-nm high brightness tapered diode lasers grown by solid-source MBE


Abstract:

We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor phase epitax...Show More

Abstract:

We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor phase epitaxy grown lasers and reach 1.6 W of total power and 1 W of nearly diffraction-limited output power. First reliability tests indicate lifetimes exceeding 10 000 h.
Published in: IEEE Photonics Technology Letters ( Volume: 18, Issue: 5, March 1, 2006)
Page(s): 655 - 657
Date of Publication: 21 February 2006

ISSN Information:


I. Introduction

Molecular beam epitaxy (MBE) has long been established as a reliable technique for the growth of arsenic high-power diode lasers. With phosphide-based devices, the situation is different: Elementary phosphorous was long considered too critical for a reliable device fabrication, and metal–organic vapor phase epitaxy (MOVPE) is by far the dominant growth technique.

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