14xx-nm high brightness tapered diode lasers grown by solid-source MBE

We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor phase epitaxy grown lasers and reach 1.6 W of total power and 1 W of nearly diffraction-limited output power. First reliability tests indicate lifetimes exceeding 10 000 h.

I. Introduction

Molecular beam epitaxy (MBE) has long been established as a reliable technique for the growth of arsenic high-power diode lasers. With phosphide-based devices, the situation is different: Elementary phosphorous was long considered too critical for a reliable device fabrication, and metal–organic vapor phase epitaxy (MOVPE) is by far the dominant growth technique.