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Impact of back side circuit edit on active device performance in bulk silicon ICs | IEEE Conference Publication | IEEE Xplore
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Impact of back side circuit edit on active device performance in bulk silicon ICs

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U. Kerst; R. Schlangen; A. Kabakow; E. Le Roy; T.R. Lundquist; S. Pauthner
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Abstract:

Parallel thinning of silicon, close to active devices, is a risk potential specific to back side editing. Monitored FETs and ring oscillators showed no significant perfor...Show More

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Abstract:

Parallel thinning of silicon, close to active devices, is a risk potential specific to back side editing. Monitored FETs and ring oscillators showed no significant performance change for various remaining silicon thicknesses down to SOI-like structures.
Published in: IEEE International Conference on Test, 2005.
Date of Conference: 08-08 November 2005
Date Added to IEEE Xplore: 06 February 2006
Print ISBN:0-7803-9038-5

ISSN Information:

DOI: 10.1109/TEST.2005.1584092
Conference Location: Austin, TX, USA
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