Abstract:
Constant current stress and C-V techniques have been used to study the electron trapping phenomenon in thermally grown thin SiO2films A mathematical model based on trap f...Show MoreMetadata
Abstract:
Constant current stress and C-V techniques have been used to study the electron trapping phenomenon in thermally grown thin SiO2films A mathematical model based on trap filling and trap generation is proposed and the capture cross-sections, trap generation rates, the centroids, and the densities of the pre-existing and generated traps are determined as functions of the current density. The generation of interface states is also characterized.
Published in: 1981 International Electron Devices Meeting
Date of Conference: 07-09 December 1981
Date Added to IEEE Xplore: 09 August 2005
Department of Electrical Engineering and Computer Sciences, Electronice Research Laboratory, University of California, Berkeley, CA, USA
Department of Electrical Engineering and Computer Sciences, Electronice Research Laboratory, University of California, Berkeley, CA, USA
Department of Electrical Engineering and Computer Sciences, Electronice Research Laboratory, University of California, Berkeley, CA, USA
Department of Electrical Engineering and Computer Sciences, Electronice Research Laboratory, University of California, Berkeley, CA, USA
