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WP-B4 pH ISFET's using Al2O3, Si3N4, and SiO2gate thin films | IEEE Journals & Magazine | IEEE Xplore

WP-B4 pH ISFET's using Al2O3, Si3N4, and SiO2gate thin films

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First Page of the Article

Published in: IEEE Transactions on Electron Devices ( Volume: 26, Issue: 11, November 1979)

Page(s): 1856 - 1857

Date of Publication: 30 November 1979

DOI: 10.1109/T-ED.1979.19780

First Page of the Article

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