Abstract:
A complementary pair of high power MOSFETs is developed, each of which has a drain breakdown voltage as high as 200V and 10A current capabilities. This device has an offs...Show MoreMetadata
Abstract:
A complementary pair of high power MOSFETs is developed, each of which has a drain breakdown voltage as high as 200V and 10A current capabilities. This device has an offset gate and an ion-implanted additional channel to realize this high breakdown voltage. The device structure including the use of a field plate, is optimized by two dimensional MOS analysis. This design and a highly refined polysilicon gate fabrication process contribute to the realization of the high power devices. Measurement of these devices reveals superior thermal characteristic and assures a larger ASO than that of conventional bipolar transistors of the same chip size.
Published in: 1977 International Electron Devices Meeting
Date of Conference: 05-07 December 1977
Date Added to IEEE Xplore: 09 August 2005
