Abstract:
A test structure to separately measure sheet resistances of highly-doped-drain (HDD) and lightly-doped-drain (LDD) in LDD-type CMOSFET with various gate spaces S having s...Show MoreMetadata
Abstract:
A test structure to separately measure sheet resistances of highly-doped-drain (HDD) and lightly-doped-drain (LDD) in LDD-type CMOSFET with various gate spaces S having sub-100 nm sidewalls was proposed. The reciprocal of source/drain-resistance R/sup -1/ versus S characteristics show the unstable resistance variations in the narrower S regions, which suggest that the micro-loading or size effects seriously affect the characteristics.
Published in: Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005.
Date of Conference: 04-07 April 2005
Date Added to IEEE Xplore: 20 June 2005
Print ISBN:0-7803-8855-0
ISSN Information:
References is not available for this document.
Contents References is not available for this document.
