Abstract:
A novel method is reported to measure the sheet resistance of materials that are incompatible with a CMOS process, using suspended polysilicon Greek cross test structures...Show MoreMetadata
Abstract:
A novel method is reported to measure the sheet resistance of materials that are incompatible with a CMOS process, using suspended polysilicon Greek cross test structures. To demonstrate the technique, gold (Au) was blanket evaporated in various thicknesses onto the test structures and the sheet resistance extracted. Sheet resistances ranging from 0.30/spl Omega///spl square/to 0.10/spl Omega///spl square/were measured for the deposited Au films on Greek cross structures with arm widths ranging between 5 and 20 /spl mu/m. The extracted resistivity of 4.85/spl times/10/sup -8//spl Omega/m agrees with values found in the literature (3.0/spl times/10/sup -8//spl Omega/m-5.0/spl times/10/sup -8//spl Omega/m) demonstrating that the structures are fully capable of measuring sheet resistance of blanket deposited films.
Published in: Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005.
Date of Conference: 04-07 April 2005
Date Added to IEEE Xplore: 20 June 2005
Print ISBN:0-7803-8855-0