Abstract:
Metal-oxide-semiconductor first effect transistors (MOSFETs) are currently being used in a variety of memory applications. The requirements of memory usage and the charac...Show MoreMetadata
Abstract:
Metal-oxide-semiconductor first effect transistors (MOSFETs) are currently being used in a variety of memory applications. The requirements of memory usage and the characteristics of MOSFET devices and technology have led to a number of unique circuits for these applications. Organization and design considerations of memory systems using MOSFET devices are reviewed, and examples of specific circuits are presented and analyzed. These include random access cells, shift registers, read only storage, and on-chip support circuits; both complementary and noncomplementary circuits are discussed.
Published in: Proceedings of the IEEE ( Volume: 59, Issue: 7, July 1971)
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Memory Circuits ,
- Metal Oxide Semiconductor Field Effect ,
- Small Area ,
- Decoding ,
- Circuitry ,
- Memory System ,
- Technological Features ,
- Random Access ,
- Active Devices ,
- Information Bits ,
- Charge Storage ,
- Node Level ,
- Most Significant Bit ,
- Inductive Load ,
- Shift Register ,
- Pulse Phase ,
- Loading Device ,
- Stray Capacitance ,
- Clock Phase ,
- Word Line ,
- Device Gate ,
- Sense Amplifier ,
- Capacitive Coupling ,
- Low Voltage ,
- Gain Ratio ,
- Output Node ,
- Wide Range Of Applications ,
- Cycle Time ,
- Memory Cells ,
- Setup Time
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Memory Circuits ,
- Metal Oxide Semiconductor Field Effect ,
- Small Area ,
- Decoding ,
- Circuitry ,
- Memory System ,
- Technological Features ,
- Random Access ,
- Active Devices ,
- Information Bits ,
- Charge Storage ,
- Node Level ,
- Most Significant Bit ,
- Inductive Load ,
- Shift Register ,
- Pulse Phase ,
- Loading Device ,
- Stray Capacitance ,
- Clock Phase ,
- Word Line ,
- Device Gate ,
- Sense Amplifier ,
- Capacitive Coupling ,
- Low Voltage ,
- Gain Ratio ,
- Output Node ,
- Wide Range Of Applications ,
- Cycle Time ,
- Memory Cells ,
- Setup Time
