Abstract:
The authors propose a practical half-masked Damascene-like full silicidation (HAMDAMA) process to fabricate dual gate HfSiON CMOSFET in which poly-Si and fully silicided ...Show MoreMetadata
Abstract:
The authors propose a practical half-masked Damascene-like full silicidation (HAMDAMA) process to fabricate dual gate HfSiON CMOSFET in which poly-Si and fully silicided (FUSI) NiSi gates are used for n-FET and p-FET, respectively. Using this process, I/sub on/ in p-FET was improved by thinner T/sub eff/(inv) and higher hole mobility than the conventional poly-Si gate process.
Date of Conference: 13-15 December 2004
Date Added to IEEE Xplore: 25 April 2005
Print ISBN:0-7803-8684-1