Abstract:
A 160mW low-IF single-chip tuner for a mobile ISDB-T receiver is realized in SiGe BiCMOS. Its 25mW variable gain LNA shows 2.7dB NF and 62dB variable gain range. The 20mW...Show MoreMetadata
Abstract:
A 160mW low-IF single-chip tuner for a mobile ISDB-T receiver is realized in SiGe BiCMOS. Its 25mW variable gain LNA shows 2.7dB NF and 62dB variable gain range. The 20mW switched-capacitor channel selection filter exhibits 80dB out-of-band rejection and 11nV//spl radic/Hz input referred noise.
Date of Conference: 15-19 February 2004
Date Added to IEEE Xplore: 13 September 2004
Print ISBN:0-7803-8267-6
Print ISSN: 0193-6530
Contents 