Abstract:
The thermodynamic analysis of both interfacial SiO/sub 2/ and silicide reactions, and phase separation of HfO/sub 2/ and ZrO/sub 2/ are performed. The analysis includes g...Show MoreMetadata
Abstract:
The thermodynamic analysis of both interfacial SiO/sub 2/ and silicide reactions, and phase separation of HfO/sub 2/ and ZrO/sub 2/ are performed. The analysis includes gaseous species, because typical gate dielectrics are ultra-thin layers and diffusivities for species from the surrounding atmosphere, such as oxygen, may be high. Calculations for the ZrO/sub 2/-SiO/sub 2/ show that compositions between /spl sim/45 mol% and /spl sim/90 mol% SiO/sub 2/ lie within the metastable extension of the spinodal at typical annealing temperatures of 1000 C. Grazing-incidence small-angle X-ray scattering (GISAXS) and high-resolution transmission electron microscopy (HRTEM) are used to investigate phase separated microstructure in hafnium silicate films after rapid thermal annealing between 700 and 1000 C.
Date of Conference: 10-12 December 2003
Date Added to IEEE Xplore: 15 March 2004
Print ISBN:0-7803-8139-4
Materials Department, University of California, Santa Barbara, CA, USA
Materials Department, University of California, Santa Barbara, CA, USA
Materials Department, University of California, Santa Barbara, CA, USA
International Sematech, Austin, TX, USA
International Sematech, Austin, TX, USA
NPL Materials Centre, National Physical Laboratory, Sonning Common, Teddington, Middlesex, UK
Johnson Matthey Technology, Reading, UK
Argonne National Laboratory, Argonne, IL, USA
Argonne National Laboratory, Argonne, IL, USA
Argonne National Laboratory, Argonne, IL, USA
Department of Electical Engineering, Yale University, New Heaven, CT, USA
Department of Electical Engineering, Yale University, New Heaven, CT, USA
Contents Materials Department, University of California, Santa Barbara, CA, USA
Materials Department, University of California, Santa Barbara, CA, USA
Materials Department, University of California, Santa Barbara, CA, USA
International Sematech, Austin, TX, USA
International Sematech, Austin, TX, USA
NPL Materials Centre, National Physical Laboratory, Sonning Common, Teddington, Middlesex, UK
Johnson Matthey Technology, Reading, UK
Argonne National Laboratory, Argonne, IL, USA
Argonne National Laboratory, Argonne, IL, USA
Argonne National Laboratory, Argonne, IL, USA
Department of Electical Engineering, Yale University, New Heaven, CT, USA
Department of Electical Engineering, Yale University, New Heaven, CT, USA
