Abstract:
100% Ge pin-photodetectors grown on SiGe strain relaxed buffer (SRB) layers are presented, For integrated detectors the SRB layer growth as well as the subsequent SiGe ph...Show MoreMetadata
Abstract:
100% Ge pin-photodetectors grown on SiGe strain relaxed buffer (SRB) layers are presented, For integrated detectors the SRB layer growth as well as the subsequent SiGe photodiode technology processing must be compatible with standard CMOS technology. DC photoresponsivities of 145 mA/W at 1.3 /spl mu/m and 25 mA/W at 1.55 /spl mu/m can be achieved. In first experiments the 100% Ge pin-photodetector exhibits an RC limited 3-dB opto-electrical bandwidth of 0.9 GHz.
Published in: 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.
Date of Conference: 13-13 February 2003
Date Added to IEEE Xplore: 26 February 2004
Print ISBN:0-7803-7707-9
Print ISSN: 0193-6530
Contents 