Abstract:
Novel diode with low offset voltage below 0.6V is proposed by using MONOS FET with asymmetric threshold voltage. Offset voltage of 0.3V can be achieved by suppressing off...Show MoreMetadata
Abstract:
Novel diode with low offset voltage below 0.6V is proposed by using MONOS FET with asymmetric threshold voltage. Offset voltage of 0.3V can be achieved by suppressing off state current and reverse leakage current. This technique gives promising characteristics for next generation circuits with low voltage operation.
Published in: Digest. International Electron Devices Meeting,
Date of Conference: 08-11 December 2002
Date Added to IEEE Xplore: 06 February 2003
Print ISBN:0-7803-7462-2
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