A Generalized Voltage Gain Model of the Asymmetric Γ-Source Converter with Typical Parasitic Parameters Considered

Compared to traditional impedance networks without integrated coupled inductors, asymmetric Γ-source converter exhibits significant advantages in improving voltage gain and reducing shoot through duty cycle. However, its actual voltage gain is significantly influenced by parasitic parameters within the circuit components. An equivalent circuit model is established, which comprehensively considers the leakage inductance, parasitic resistance, and core loss in the coupled inductor. This complex model is simplified into two different scenarios with and without considering duty cycle loss. Subsequently, the generalized voltage gain model considering duty cycle loss, parasitic resistance, and core loss has been derived. Detailed simulations and experiments are implemented for verifying the effectiveness of the proposed equivalent circuit and mathematical derivation, while elucidating the specific effects of different parasitic parameters on the voltage gain of asymmetric Γ-source converter. The proposed model contributes to further improving the circuit optimization design of asymmetric Γ-source and enhancing their operational performance.