Development of a High-Endurance Ferroelectric Capacitor for FeRAM in Automotive and Industrial Applications

A high-endurance ferroelectric capacitor (FC) incorporating a Pb(Zr, Ti)O
$_{\text{3}}$
(PZT) layer, fabricated via liquid delivery metal-organic chemical vapor deposition, and a sputter-deposited Bi-doped SrRuO
$_{\text{3}}$
(B-SRO) interlayer has been successfully developed. This FC exhibits excellent electrical properties, including a low coercive voltage, achieved by thinning the PZT layer, allowing it to function effectively across a wide temperature range of
$-$
45
$^{\circ}$
C to 125
$^{\circ}$
C, and at an operating voltage of 1.8 V. Typically, thinning the ferroelectric layer leads to increased leakage current and degradation in reliability, such as retention and endurance. However, our developed FC demonstrates robust retention after baking at 150
$^{\circ}$
C for 1000 h, low leakage current, and a predicted endurance of at least 10
$^{\text{15}}$
cycles. Our developed FC has potential applications in ferroelectric random access memory (FeRAM) operating at 1.8 V with an endurance of at least over 10
$^{\text{14}}$
cycles used for automotive and industrial devices within the specified temperature range.