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Oxidation State Modification in Gate Dielectric for Ge nMOSFET With Mixed Hydrogen and Ozone Plasma Pretreatments | IEEE Journals & Magazine | IEEE Xplore

Oxidation State Modification in Gate Dielectric for Ge nMOSFET With Mixed Hydrogen and Ozone Plasma Pretreatments


Abstract:

An ozone-based plasma pretreatment was proposed to reduce the oxygen vacancy and unstable germanium (Ge) suboxide (GeO _{x}\text {)} at lower interface of interfacial ...Show More

Abstract:

An ozone-based plasma pretreatment was proposed to reduce the oxygen vacancy and unstable germanium (Ge) suboxide (GeO _{x}\text {)} at lower interface of interfacial layer (IL). With higher oxidizing ability of ozone and lower plasma damage in process, the formation of unstable GeOx at lower interface of IL can be effectively suppressed. The devices with a mixed hydrogen and ozone plasma (MHOP) pretreatment exhibit an ultrathin equivalent oxide thickness (EOT) of 0.57 nm, a fairly acceptable gate leakage current density of 3 \times 10^{-{3}} A/cm2, lower interface trap density of 10^{{11}} cm ^{-{2}}\cdot eV ^{-{1}} , and fewer border traps in Ge MOS capacitor. Also, a higher driver current of 1.4 mA, a lower subthreshold swing (SS) of 113 mV/dec, and higher on/off current ratio of 3.2 \times 10^{{3}} for Ge MOSFET can be achieved with an MHOP treatment.
Published in: IEEE Transactions on Electron Devices ( Volume: 72, Issue: 1, January 2025)
Page(s): 57 - 61
Date of Publication: 03 December 2024

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