Abstract:
This brief presents an 11.5–17.5-GHz power amplifier (PA) with 32-dBm output power in a 0.25- \mu m gallium nitride (GaN) process. Capacitively and inductively coupled...Show MoreMetadata
Abstract:
This brief presents an 11.5–17.5-GHz power amplifier (PA) with 32-dBm output power in a 0.25- \mu m gallium nitride (GaN) process. Capacitively and inductively coupled resonators are used for impedance matching to achieve a flat in-band power gain and a high out-of-band rejection. Meanwhile, the output matching network provides a second-harmonic suppression to improve the average efficiency within the bandwidth of the PA. The measurements show that the proposed PA exhibits an output power of 31–32.5 dBm and a power gain of more than 10.5 dB from 11.5 to 17.5 GHz. Due to the matching networks providing convenient dc feed and dc block, the chip dimension is only 2.1\times 1.1 mm2, corresponding to a power density of 0.77 W/mm2. The proposed PA demonstrates a competitive fractional bandwidth and power density in GaN PA monolithic microwave integrated circuits (MMICs).
Published in: IEEE Transactions on Very Large Scale Integration (VLSI) Systems ( Volume: 33, Issue: 3, March 2025)