Single Event Effects and Total Ionizing Dose Characterization of MNEMOSYNE STT MRAM Prototype with 1.8V SPI Interface | IEEE Conference Publication | IEEE Xplore
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Single Event Effects and Total Ionizing Dose Characterization of MNEMOSYNE STT MRAM Prototype with 1.8V SPI Interface

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Simone Gerardin; Marta Bagatin; Pierre-Xiao Wang; Pierre Kohler; Alexandre Bosser; Lionel Gouyet
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Abstract:

Single event effects and total ionizing dose results for the final prototype of the memory ASIC for space applications developed in the framework of the EU H2020 Mnemosyn...Show More

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Abstract:

Single event effects and total ionizing dose results for the final prototype of the memory ASIC for space applications developed in the framework of the EU H2020 Mnemosyne project are presented.
Published in: 2024 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2024 NSREC)
Date of Conference: 22-27 July 2024
Date Added to IEEE Xplore: 26 November 2024
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ISSN Information:

DOI: 10.1109/REDW61286.2024.10759148
Conference Location: Ottawa, ON, Canada
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