Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM with a-IGZO cell transistors

In this study, we report the integration of an a-IGZO cell transistor and a high-
k
ZrO
₂
cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO
₂
capacitor can successfully achieve a high
k
-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of 1.3 × 10
^-16
A/μm, even after the high-
k
dielectric crystallization process.