Improvement of the Performance of 885 nm Laser Diodes by Using the High Al Component Barrier Layers

885 nm laser diode with high Al component AlGaAs barrier layers (HABLs) are designed and fabricated to mitigate carrier leakage. As the height of the potential barrier increases, the internal quantum efficiency increases. The slope efficiency increases from 1.15 W/A to 1.20 W/A, and the characteristic temperature for slope efficiency between
$35.0~^{\circ }$
C and
$55.0~^{\circ }$
C increases by 48 K. This letter describes a method for boosting both the slope efficiency and the characteristic temperature for slope efficiency.