A Balanced Power Amplifier With Complementary Adaptive-Bias in 28-nm Bulk CMOS for 5G Millimeter-Wave Systems

This brief presents a balanced power amplifier (BPA) with adaptive-bias for 5G applications based on 28-nm bulk CMOS process. The PA utilizes a differential balanced structure which cancels out reflected signals at the isolation ports, thereby improving return losses. A folded differential quadrature coupler is designed to connect respectively to the input and output of the PAs. The folded layout effectively reduces the chip size. In addition, a complementary adaptive bias is implemented to cancel out the nonlinear effects of the two PAs, significantly enhancing the overall linearity. The measure PA realizes a 3-dB bandwidth of 21.3~28.4 GHz with a peak gain of 21.1 dB. The large-signal measurement results show that the PA achieve an OP1dB of 20.3 dBm, a Psat of 21.6 dBm, and a peak PAE (PAEmax) of 30.9%. The measured |AM-PM|P1dB is less than 8.9°, which is 3 8° lower than when using a normal bias. For 5G NR FR2 200-MHz 64QAM signals, the measured Pavg / PAEavg / ACPR of 11.2 dBm / 6% / -24.9 dBc are achieved at the EVM of -25 dB. The DC power supply voltage is 1.8 V. The core chip size is only 0.27 mm2, demonstrating a compact design within a balanced architecture.