Abstract:
Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on...Show MoreMetadata
Abstract:
Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA _{{0}.{83}}\text {)}_{{0}.{95}} Pb(I0.83Br _{{0}.{17}}\text {)}_{{3}} perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for 10^{{4}} cycles and the retention time is over 10^{{4}} seconds at 85~^{\circ } C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA _{{0}.{83}}\text {)}_{{0}.{95}} Pb(I0.83Br _{{0}.{17}}\text {)}_{{3}} . The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.
Published in: IEEE Electron Device Letters ( Volume: 45, Issue: 11, November 2024)