Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA
$_{{0}.{83}}\text {)}_{{0}.{95}}$
Pb(I0.83Br
$_{{0}.{17}}\text {)}_{{3}}$
perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for
$10^{{4}}$
cycles and the retention time is over
$10^{{4}}$
seconds at
$85~^{\circ }$
C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA
$_{{0}.{83}}\text {)}_{{0}.{95}}$
Pb(I0.83Br
$_{{0}.{17}}\text {)}_{{3}}$
. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.