Development of Parallel RF Power Amplifier Using GaN HEMT with Independent Biasing Circuits for Wireless Communication

Radio frequency (RF) power amplifier is one of the components required in the signal transmission process to ensure that no distortion occurs during the signal trans-mission process. Parallel RF power amplifiers are one of the configurations that can be applied to avoid failures in RF power amplifiers. In this paper, the development of a parallel RF power amplifier using Gallium Nitride (G$a$N) High Electron Mobility Transistor (HEMT) CGH40006P transistor is proposed with independent biasing circuit for applications in wireless communication systems. G$a$N HEMT is a type of transistor which utilizes semiconductor materials, i.e., Gallium and Nitride, to produce electrons with high mobility for high power and high frequency applications. A power divider with Cohn topology is applied to divide the input power, while a conventional Wilkinson is used to combine the output power. The dielectric material used for the development is Rogers RO-4003C substrate with the thickness of 0.8 mm. The maximum gain is 16.2 dB at the frequency of 1.2 GHz with the 3 dB bandwidth achieved up to 2.5 GHz.