Introducing a Controlled Interfacial Layer to Enhance the Template Effect of ZrO₂ in the ZrO₂/HfO₂/ZrO₂ Structure

A novel approach using a controlled interfacial layer (CIL) to modulate HfO₂ thin film crystallization in ZrO₂/HfO₂/ZrO₂ (ZHZ) structures was investigated. Through X-ray diffraction and high-resolution transmission electron microscopy, the CIL suppresses undesired monoclinic phases in HfO₂, favoring the desired tetragonal phase for high dielectric constants. Precise control of HfO₂ thickness via CIL maintains constant dielectric constants across ZHZ structures, addressing challenges of fluctuating constants. This study highlights CIL’s potential in tailored ZrO₂/HfO₂ engineering for electronics, providing insights into crystallization behavior and paving the way for advanced device applications.