Refining Accuracy: A Quasi-Floating Channel SPICE Model for Third-Quadrant SiC MOSFET Analysis in Both Planar and Trench Structures

This paper presents an improved SPICE model for SiC MOSFETs. We introduce a model dividing SiC MOSFET operation into a PN diode and a quasi-floating channel (QFC) model, specifically addressing the third quadrant operational mode. This approach significantly reduces root mean square error in $I_{D}-V_{D}$ characteristics compared to conventional models, as demonstrated by experimental data from dynamic switching experiments and comparative analysis. The proposed model exhibits a marked improvement in replicating real-world operational dynamics of SiC MOSFETs, especially in dynamic scenarios. With a maximum 95% reduction in RMSE and enhanced computational efficiency, the model is established as a valuable tool for advanced SiC MOSFET simulation and analysis, impacting the efficiency, performance, and reliability of power electronic systems.