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Novel Low Thermal Budget Bonding Using Single Wafer Thermal Processing System, Resulting in Excellent Wafer-to-Wafer Hybrid Bonding at sub-0.5um Pitch | IEEE Conference Publication | IEEE Xplore

Novel Low Thermal Budget Bonding Using Single Wafer Thermal Processing System, Resulting in Excellent Wafer-to-Wafer Hybrid Bonding at sub-0.5um Pitch


Abstract:

We report on a reduced thermal budget for hybrid bonding anneal using a single wafer thermal processing system (TPS). Robust bonding with excellent Cu gap closure and gra...Show More

Abstract:

We report on a reduced thermal budget for hybrid bonding anneal using a single wafer thermal processing system (TPS). Robust bonding with excellent Cu gap closure and grain growth across the interface was achieved using a single step 300°C 5min TPS anneal, thereby reducing anneal duration by two orders of magnitude compared to the industry standard furnace anneal. The Cu gap closure efficacy with 350°C 5min TPS anneal was further verified electrically through functional 2Mb viachains @ 0.5um pitch with a Rs/link <5 Ohm.
Date of Conference: 28-31 May 2024
Date Added to IEEE Xplore: 26 June 2024
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Conference Location: Denver, CO, USA

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