Abstract:
We investigated single hexagonal silicon -germanium nanowires using photoluminescence spectroscopy. We observe stimulated emission at a threshold at 0.2 mJcm-2, with a ne...Show MoreMetadata
Abstract:
We investigated single hexagonal silicon -germanium nanowires using photoluminescence spectroscopy. We observe stimulated emission at a threshold at 0.2 mJcm-2, with a net optical gain at -294 cm-1 below the gain threshold. This puts hex-SiGe close to lasing, opening the path to a silicon-based nanolaser.
Published in: 2024 IEEE Silicon Photonics Conference (SiPhotonics)
Date of Conference: 15-18 April 2024
Date Added to IEEE Xplore: 10 June 2024
ISBN Information:
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