Quantum Photonic Properties of Nitride Semiconductor Devices

Obtaining non‐classical photonic emission or light from semiconductor nanostructures has become a subject of intense research interest because of their potential use in quantum computation. Semiconductor quantum dots (QDs) can be used to obtain single‐photon emissions. Group III‐Nitride QDs are of great interest because they can provide single‐photon sources from the infrared to the ultraviolet energy range through the visible. While the piezoelectric effects are lower in QDs compared to quantum wells, there is still substantial polarization‐induced energy shifts in the form of the quantum‐confined Stark effect. The energy of photons can suffer from spectral diffusion due to Coulomb interactions between the QD excitons and itinerant electrons in the surrounding medium. Coherent control of photonic qubits for quantum computing often requires spectral purity. The photon natural linewidth for group III‐Nitride QD emission depends on the exciton lifetime.