Reactive Ion Etching

Summary

In reactive ion etching (RIE), many species such as neutrals, radicals, ions, electrons, and photons impact the surface simultaneously and continuously. This chapter introduces mechanisms that are unique to RIE. These RIE‐specific mechanisms are etching rate dependence on simultaneous fluxes, chemical sputtering, the formation of a mixed surface layer, and redeposition of etching products. The chapter discusses etching performance in general terms and link them to mechanisms RIE has in common with simpler etching technologies as well as to RIE‐specific mechanisms. There are hundreds of etching applications used in the manufacturing of advanced integrated circuits when considering various IC device types, functional elements of these devices, and IC manufacturer‐specific integration solutions. The goal of most etching processes is to transfer a pattern generated by lithography to form a structure that stays in the integrated circuit. The chapter also discusses self‐aligned double and quadruple patterning, which increases the number of etch applications.