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Enhanced Performance of AlGaN-Based DUV-LEDs With Passivated Nano-Hole Arrays | IEEE Journals & Magazine | IEEE Xplore

Enhanced Performance of AlGaN-Based DUV-LEDs With Passivated Nano-Hole Arrays


Abstract:

In this study, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) with 0, 3\times3 , and 3\times5 passivated nano-hole arrays have been fabricated, and ...Show More

Abstract:

In this study, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) with 0, 3\times3 , and 3\times5 passivated nano-hole arrays have been fabricated, and their photoelectric and thermal performance have been analyzed. The measured results indicate that the leakage current could be ignored in the DUV-LEDs with passivated nano-hole arrays, and the resistance of the DUV-LEDs decreases as the number of passivated nano-holes increases. In addition, the DUV-LEDs with 3\times5 passivated nano-hole arrays present the highest external quantum efficiency (EQE), which is 13.3% higher than that of the standard DUV-LEDs, due to the synergistic effect of etching damage and enhanced light extraction efficiency (LEE). Moreover, the room temperature EQE of these DUV-LEDs has been analyzed with the ABC + {f} ( {n} ) model. Finally, the results of thermal resistance and surface temperature distribution of these DUV-LEDs indicate that there is little impact on the thermal performance of the device with passivated nano-hole arrays.
Published in: IEEE Transactions on Electron Devices ( Volume: 71, Issue: 6, June 2024)
Page(s): 3722 - 3726
Date of Publication: 26 April 2024

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