Research of 3D-TSV crystal plastic constitutive and Optimization of electroplated copper filling

Three-dimensional advanced packaging (3D packaging) technology, as the key technology to surpass Moore’s Law, still faces many technical problems to be solved, and the most critical one is the reliability of through-silicon-via (TSV). In this study, the influence of the crystal plastic parameters on TSV constitutive model is explored, which can provide basic data for the establishment of TSV constitutive model. Besides, an electroplating platform is built to complete the electroplated copper filling test and explore the optimistic process parameters of TSV filling and the effect of the TSV size on the electroplated coating properties. Result shows that: 1) TSV crystal plastic parameters have little effect on the elastic deformation stage. During Plastic deformation stage, the deformation resistance of TSV increases with the increase of critical shearing stress τ0 and slip hardening parameters a, and decreases with the increase of initial shear strain rate ${\dot \gamma _0}$, initial hardening modulus h0, saturated shear stress τsat and strain rate sensitivity parameter m; 2) The effect of electroplating current on the electroplated coating thickness is the greatest (range = 0.38), followed by solution concentration (0.2), temperature (0.24) and time (0.17), respectively, the optimal electroplating time depends on the features of electroplating parts. 3) Electroplated copper filling efficiency of TSV increases as its inside diameter decreases, while too small diameter will be accompanied by significant size effect, which in turn inhibits the filling efficiency. Relevant research can provide some reference for reliability evaluation and manufacturing process optimization of TSV.