Abstract:
We fabricated decananometer-gate pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As high-electron mobility transistors (HEMTs) with a very short gate-chann...Show MoreMetadata
Abstract:
We fabricated decananometer-gate pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As high-electron mobility transistors (HEMTs) with a very short gate-channel distance. We obtained a cutoff frequency f/sub T/ of 562 GHz for a 25-nm-gate HEMT. This f/sub T/ is the highest value ever reported for any transistor. The ultrahigh f/sub T/ of our HEMT can be explained by an enhanced electron velocity under the gate, which was a result of reducing the gate-channel distance.
Published in: IEEE Electron Device Letters ( Volume: 23, Issue: 10, October 2002)
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- High Electron Mobility ,
- Drift Velocity ,
- High Electron Mobility Transistors ,
- Monte Carlo Simulation ,
- Fabrication Process ,
- Chemical Vapor Deposition ,
- Electron Beam Lithography ,
- Reactive Ion Etching ,
- Channel Layer ,
- Capping Layer ,
- Metal Organic Chemical Vapor Deposition ,
- Gate Length ,
- SiO2 Film ,
- Saturation Velocity ,
- S-parameter Measurements
Contents Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- High Electron Mobility ,
- Drift Velocity ,
- High Electron Mobility Transistors ,
- Monte Carlo Simulation ,
- Fabrication Process ,
- Chemical Vapor Deposition ,
- Electron Beam Lithography ,
- Reactive Ion Etching ,
- Channel Layer ,
- Capping Layer ,
- Metal Organic Chemical Vapor Deposition ,
- Gate Length ,
- SiO2 Film ,
- Saturation Velocity ,
- S-parameter Measurements
