Impact Statement:This work demonstrates photo-enhanced ferromagnetism at room temperature in gallium nitride. This is significant because the material maintains enhancement for long perio...Show More
Abstract:
The insertion of manganese into GaN-based p-i-n epitaxial structures allows for a ferromagnetic phase to occur at room temperature that can be photo-enhanced and retained...Show MoreMetadata
Impact Statement:
This work demonstrates photo-enhanced ferromagnetism at room temperature in gallium nitride. This is significant because the material maintains enhancement for long periods of time (>8 hours), can support two-photon coherent control, and is based in a scalable solid-state platform. It is then proposed that a modified version of the device structure could act as a single photon transducer at room temperature, converting photon to injected hole that amplifies and retains a single spin ferromagnetic state. These findings further the understanding of how photon-to-spin conversion could be implemented and made reversible for applications that require longer state storage, such as in a quantum memory or repeater node. It is anticipated that future work will look to these findings and extend the device structure to develop a scalable, room temperature memory platform for nascent quantum networks.
Abstract:
The insertion of manganese into GaN-based p-i-n epitaxial structures allows for a ferromagnetic phase to occur at room temperature that can be photo-enhanced and retained for >8 hours. GaN p-i-n LED structures are implanted with manganese to form a ferromagnetic phase and illuminated with resonant photons across the GaN bandgap. The magnetization after illumination is found to increase by 0.2~\mu _{B} /Mn atom. Subsequent illumination below the GaN:Mn bandgap is found to remove the photo-enhancement of magnetism and fully demagnetize the material. The optically-driven process confirms that photon absorption drives hole-media induced ferromagnetic changes to the top layer in GaN:Mn structures. A modified p-i-n structure is designed that situates a two-dimensional hole gas (2DHG) beneath the magnetic layer for improvement of the hole injection effect. The mid-gap state formed by the implanted manganese in GaN:Mn is simulated for two-photon electromagnetic induced transparency that can...
Published in: IEEE Journal of Quantum Electronics ( Volume: 60, Issue: 1, February 2024)
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