Characterization of resistive switching phenomena in thermal silicon oxide RRAM devices by means of small-signal measurements | IEEE Conference Publication | IEEE Xplore
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Characterization of resistive switching phenomena in thermal silicon oxide RRAM devices by means of small-signal measurements

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Piotr Wiśniewski; Bartłomiej Stonio; Jakub Jasiński; Andrzej Mazurak
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Abstract:

Metal-oxide-semiconductor devices with thermal silicon oxide are investigated with respect to their potential application as RRAM devices. We use small-signal measurement...Show More

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Abstract:

Metal-oxide-semiconductor devices with thermal silicon oxide are investigated with respect to their potential application as RRAM devices. We use small-signal measurements to characterize the device properties. Material and electrical characterization results are presented and discussed for devices fabricated on highly doped n-type substrate.
Published in: 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
Date of Conference: 16-17 November 2023
Date Added to IEEE Xplore: 25 December 2023
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DOI: 10.1109/IMFEDK60983.2023.10366347
Conference Location: Kyoto, Japan
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