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A latch phenomenon in buried N-body SOI NMOSFET's | IEEE Journals & Magazine | IEEE Xplore

A latch phenomenon in buried N-body SOI NMOSFET's


Abstract:

The authors show that a snapback effect resulting in a latching can exist in a buried N-body NMOS device on silicon-on-insulator (SOI). Using numerical simulations, it is...Show More

Abstract:

The authors show that a snapback effect resulting in a latching can exist in a buried N-body NMOS device on silicon-on-insulator (SOI). Using numerical simulations, it is demonstrated that when V/sub GS/ is less than the flat-band voltage and after triggering, this kind of device behaves as a floating-base n-p-n bipolar transistor, the base hole density of which is controlled by an inversion layer instead of the usual base doping. The latch phenomenon results from the combination of this parasitic quasi-bipolar device, a back surface NMOS transistor, and impact ionization current.<>
Published in: IEEE Electron Device Letters ( Volume: 12, Issue: 7, July 1991)
Page(s): 372 - 374
Date of Publication: 06 August 2002

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