Wide-band Low Phase Noise Amplifier MMIC in InGaP/GaAs HBT technology

In this paper, we proposed a wide-band low phase noise amplifier monolithic microwave integrated circuit (MMIC) based on InGaP/GaAs hetero-junction bipolar transistor (HBT) technology. In this design, a distributed configuration amplifier was developed and a wide frequency range of 2-15GHz is to be achieved with a total chip size of 3.0mm×1.8mm for extremely low phase noise communication system applications. The proposed amplifier is composed of seven parallel cascaded gain cells, and provides more than 10 dB signal gain in the entire bandwidth. The measured phase noise achieves -163dBc/Hz@100kHz offset at 9.5 GHz with a single 5V supply voltage and consumes 65 mA of current.