Total-Ionizing-Dose Radiation-Induced Electric Field Redistribution Model and Hardening Method for SGT MOSFET

In this article, an analytical model for the total-ionizing-dose (TID) radiation-induced electric field redistribution (RIER) in the drift region is established based on the Poisson equation, which explains the “slow-fast-slow” degradation trend of breakdown voltage (BV) of the shield gate trench metal-oxide-semiconductor field effect transistor (SGT MOSFET) with the increase of the radiation dose in the experiments. Moreover, a new radiation-hardened SGT MOSFET based on the internal electric field modulation (IEM-SGT) concept is proposed. The simulation shows that IEM-SGT can achieve five times better radiation resistance of BV than that of the non-hardened device, with a small deterioration in electrical performance.