Computing in Memory Using Doubled STT-MRAM With the Application of Binarized Neural Networks

The computing-in-memory (CiM) approach is a promising option for addressing the processor–memory data transfer bottleneck while performing data-intensive applications. In this letter, we present a novel CiM architecture based on spin-transfer torque magnetic random-access memory, which can work in computing and memory modes. In this letter, two spintronic devices are considered per cell to store the main data and its complement to address the reliability concerns during the read operation, which also provides a fascinating ability for performing reliable Boolean operations (all basic functions), binary/ternary content-addressable memory search operation, and multi-input majority function. Since the developed architecture can perform bitwise
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operations in one cycle, a resistive-based accumulator has been designed to perform multi-input majority production to improve the structure for implementing fast and low-cost binary neural networks (BNNs). To this end, multiplication, accumulation, and passing through the activation function are accomplished in three cycles. The simulation result of exploiting the architecture in the BNN application indicates 86%–98% lower power-delay product than existing architectures.