High Performance 5G Mobile SOC Productization with 4nm EUV Fin-FET Technology

We report Snapdragon® 8 Gen 2, the latest Qualcomm® 5 G integrated mobile SoC flagship platform, in mass production with the most advanced 4nm EUV FinFET technology. Snapdragon® 8 Gen $2 \mathrm{w} 4 \mathrm{~nm}$ process had $20 \%$ chip area scaling and $\sim 20 \%$ RO performance gain vs previous $5 \mathrm{~nm}$ process used in Snapdragon® 888 production. Snapdragon® 8 Gen 2 exhibits 25% & 100% performance gain @power in CPU & GPU respectively and $\gt 20 \%$ better battery life over Snapdragon® 888 driven by both process improvements and design optimization. This high performance and low power SOC platform enable its application in both mobile and computing/gaming/AI. The $2^{\text {nd}}$ year $4 \mathrm{~nm}$ process demonstrated RO performance $+4 \%$ gain and BEOL Via Rc $\gt 20 \%$ reduction, no yield degradation confirmed its readiness for next generation Snapdragon productization