Neuron-Electrode Interface with Hodgkin-Huxley Model in ANSYS

Medical treatments using electrically active implants have gained more attention over the past decades. Numerical models are an efficient way to study these interactions. For modeling the electrical behavior of neuronal membranes with the finite element method, COMSOL Multiphysics is widely used as simulation software. In this work, we present a novel approach to model the electrical behavior of the neuronal membrane using the finite element method in ANSYS. We create a simplified and a full version of a neuron-electrode interface and compare the results. Since the simplification shows prominently different behavior, we conclude, that the simplification we made is not permissive.

1. Background

Deep brain stimulation modulates neural activity through electrical stimulation to key brain structures [1]. It is an effective treatment strategy for a wide range of neurological conditions, such as Parkinson, essential tremor, and dystonia [1]. It is widely used, although its mechanism of action is still unclear [2]. More research is necessary to understand how deep brain stimulation works and how the technology and thus the medical efficacy can be improved.