22-Watts Power Amplifier Design Using GaN HEMT

GaN wide band gap semiconductor based devices has suitable material characteristics for higher power with higher frequency applications also. Which includes higher power densities, high breakdown voltages, high saturation velocity and mobility. Gallium Nitride (G $a$ N) HEMT power amplifier (PA) accomplishing output power of 19.11-25.22 watts having frequency range of 1.18-1.88 GHz (47.13% fractional bandwidth) at center frequency 1.5 GHz is discussed in this paper. Presented amplifier module simulation results is providing maximum 58.64% power added efficiency and 59.95% drain efficiency at 27 dBm input power over the frequency range of 1.18-1.88 GHz at DC bias of VDS=32 V and VGS=-2.8 V. Devices based on GaN are a highly promising option for high power applications. Radar and L-band telecom applications both benefit greatly from this suggested PA.